JPH0446476B2 - - Google Patents
Info
- Publication number
- JPH0446476B2 JPH0446476B2 JP17909385A JP17909385A JPH0446476B2 JP H0446476 B2 JPH0446476 B2 JP H0446476B2 JP 17909385 A JP17909385 A JP 17909385A JP 17909385 A JP17909385 A JP 17909385A JP H0446476 B2 JPH0446476 B2 JP H0446476B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- type gaas
- current confinement
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000005253 cladding Methods 0.000 claims description 11
- 230000031700 light absorption Effects 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 description 9
- 201000009310 astigmatism Diseases 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17909385A JPS6239086A (ja) | 1985-08-14 | 1985-08-14 | 半導体レ−ザ素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17909385A JPS6239086A (ja) | 1985-08-14 | 1985-08-14 | 半導体レ−ザ素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6239086A JPS6239086A (ja) | 1987-02-20 |
JPH0446476B2 true JPH0446476B2 (en]) | 1992-07-30 |
Family
ID=16059932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17909385A Granted JPS6239086A (ja) | 1985-08-14 | 1985-08-14 | 半導体レ−ザ素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6239086A (en]) |
-
1985
- 1985-08-14 JP JP17909385A patent/JPS6239086A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6239086A (ja) | 1987-02-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH11135893A (ja) | エッジエミッティングレーザアレイ | |
JPH03173440A (ja) | ヘテロ構造半導体 | |
JP2863773B2 (ja) | 面発光型半導体レーザ装置 | |
US4280108A (en) | Transverse junction array laser | |
US4716570A (en) | Distributed feedback semiconductor laser device | |
JPS58114479A (ja) | 半導体発光装置 | |
JPH0446476B2 (en]) | ||
JPS6358382B2 (en]) | ||
JPS61164287A (ja) | 半導体レ−ザ | |
JP2555984B2 (ja) | 半導体レーザおよびその製造方法 | |
JPS62291987A (ja) | 光集積化素子 | |
JPH0521899Y2 (en]) | ||
JPS62137893A (ja) | 半導体レ−ザ | |
JPH03104292A (ja) | 半導体レーザ | |
JP2855887B2 (ja) | 半導体レーザ及びその製造方法 | |
JPS61150293A (ja) | 双安定半導体レ−ザ | |
JP2522281B2 (ja) | 埋込み構造半導体レ−ザ | |
JP2740165B2 (ja) | 半導体レーザ | |
JPH03174793A (ja) | 半導体レーザ | |
JPS63156385A (ja) | 光双安定半導体レ−ザ | |
JPH0119409Y2 (en]) | ||
JPH0482074B2 (en]) | ||
JPH0195583A (ja) | 埋め込み型半導体レーザ素子 | |
JPS6136720B2 (en]) | ||
JPS61290792A (ja) | 半導体レ−ザ素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |